Heterojunction Bipolar Transistors for Circuit Design. Microwave Modeling and Parameter Extraction. Jianjun Gao
Heterojunction Bipolar Transistors for Circuit Design. Microwave Modeling and Parameter Extraction
Год выпуска: 0
Автор произведения: Jianjun Gao
Жанр: Техническая литература
Издательство: John Wiley & Sons Limited
isbn: 9781118921548
Краткое описание:
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors • Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs • Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning • Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design • Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods