Insulated Gate Bipolar Transistor IGBT Theory and Design. Vinod Khanna Kumar
Insulated Gate Bipolar Transistor IGBT Theory and Design
Год выпуска: 0
Автор произведения: Vinod Khanna Kumar
Жанр: Техническая литература
Издательство: John Wiley & Sons Limited
isbn: 9780471660996
Краткое описание:
A comprehensive and «state-of-the-art» coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.