Porous Silicon Carbide and Gallium Nitride. Randall Feenstra M.
Porous Silicon Carbide and Gallium Nitride
Год выпуска: 0
Автор произведения: Randall Feenstra M.
Жанр: Техническая литература
Издательство: John Wiley & Sons Limited
isbn: 9780470751824
Краткое описание:
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more