2D Monoelements. Группа авторов

2D Monoelements - Группа авторов


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to two types of bonding, namely, the in-plane bond length d1 is about 2.224 Å , and the out-of-plane bond length d2 that is 2.244 Å, as illustrated in Figure 1.1b. The binding angles y and x are 96.3° and 102.095°, respectively. The height difference between the two half-layers is dz = 2.10 Å .

      1.2.2 Physical Properties

       1.2.2.1 Anisotropic Eectronic Behavior

      Pristine phosphorene is a p-type semiconductor with a direct band gap [13, 46–48]. By using polarization-resolved photoluminescence excitation spectroscopy at room temperature, the quasi-particle band gap of phosphorene is measured to be 2.2 eV [49]. The same value is observed with the typical tunneling spectra of U-shaped electronic spectra [48].

Graphs depict electronic features corresponding to two-dimensional BP. (a) The band structure, (b) represents the total and partial density of states.

       1.2.2.2 Optical Properties

      The puckered structure of phosphorene attributes it interesting optical properties. Phosphorene absorbs transverse radiation along its AC-axis, while it highly transmitted light along ZZ-axis [19, 52]. The photoluminescence excitation spectroscopy (PLE) measures an optical band gap of 1.31 eV owing to the exciton binding energy as discussed in [19, 49] and measured in [53]. Notice that the theoretical values are larger than the measured amounts because of the increased screening from the dielectric substrate that reduces the quasi-particle band gap and consequently the exciton binding energy [54]. Furthermore, phosphorene can absorbs the visible light since its optical absorption peak is located at 1.6 eV. All these features suggest phosphorene as a promising optoelectronic device for future applications.

Schematic illustration of the absorption spectra for undeformed monolayer phosphorene with 0% strain and deformed mono-layer under compressive –8%, –6%, and –4% and tensile strain of 4% and 5.5%. Schematic illustrations of (a) and (b) dielectric function, (c) absorption coefficient, (d) reflectivity function, and (e) EELs function, obtained by using three approximations GW-BSE, GW-RPA, and GGA-RPA. (f) Represents the wave function of electron-hole.

       1.2.2.3 Elastic Parameters


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