Fundamentals of Terahertz Devices and Applications. Группа авторов
16 9 Signal Generation by Diode Frequency Multiplication 9.1 Introduction 9.2 Bridging the Microwave to Photonics Gap with Terahertz Frequency Multipliers 9.3 A Practical Approach to the Design of Frequency Multipliers 9.4 Technology of THz Diode Frequency Multipliers 9.5 Power‐Combining at Sub‐Millimeter Wavelength 9.6 Conclusions and Perspectives Exercises References Explanatory Notes (see superscripts in text)
17 10 GaN Multipliers 10.1 Introduction 10.2 Theoretical Considerations of GaN Schottky Diode Design 10.3 Fabrication Process of GaN Schottky Diodes 10.4 Small‐signal High‐frequency Characterization of GaN Schottky Diodes 10.5 Large‐signal On‐wafer Characterization 10.6 GaN Diode Implementation for Signal Generation 10.7 Multiplier Considerations for Optimum Performance Exercises References
18 11 THz Resonant Tunneling Devices 11.1 Introduction 11.2 Principle of RTD Oscillators 11.3 Structure and Oscillation Characteristics of Fabricated RTD Oscillators 11.4 Control of Oscillation Spectrum and Frequency 11.5 Targeted Applications Exercises References
19 12 Wireless Communications in the THz Range 12.1 Introduction 12.2 Evolution of Telecoms Toward THz 12.3 THz Technologies: Transmitters, Receivers, and Basic Architecture 12.4 Devices/Function Examples for T‐Ray CMOS 12.5 THz Links 12.6 Toward Normalization of 100G Links in the THz Range 12.7 Conclusion 12.8 Acronyms E12.1 Link Budget of a THz Link References
20 13 THz Applications: Devices to Space System 13.1 Introduction 13.2 THz Heterodyne Receivers 13.3 THz Space Applications 13.4 Summary and Future Trends Acknowledgment Exercises References
21 Index
List of Tables
1 Chapter 3Table 3.1 Simulation parameters for InGaAs p–i–n photodiode.Table 3.2 Simulation parameters for InGaAs MSM photoconductor.Table 3.3 Comparison among photonic signal generation techniques.
2 Chapter 4Table 4.1 Devices characteristics.Table 4.2 Measured output power at 50 GHz and estimation at 1 THz as a functi...Table 4.3 Dc photoresponse at 1550 nm of 6 × 6 μm2 UTC‐PD and RCEUTC‐PD devic...
3 Chapter 8Table 8.1 A summary of recent plasmonic THz detectors.
4 Chapter 10Table 10.1 GaN and GaAs material properties.Table 10.2 Example ofRs estimation for GaN and GaAs.Table 10.3 Material parameters used in numerical simulation (at 300 K).Table 10.4 Parameters of Selberherr's model used in simulation (at 300 K).Table 10.5 Breakdown voltage based on Ionization Integral (at 300 K).Table 10.6 Process flow of the three technologies used in this study.Table 10.7 EC parameters of 4 μm diode.
5 Chapter 12Table 12.1 Various THz communication systems and associated technologies.
6 Chapter 13Table 13.1 Development of THz technology can be sorted based on a few general...Table 13.2 A Submm spectrometer can measure a number of trace gases in the Ma...Table 13.3 A summary of space instruments since 2008.Table 13.4 The HERO concept for OST is based on being able to build and chara...
List of Illustrations
1 Chapter 2Figure 2.1 (a) Sketch of a planar antenna printed on a dielectric substrate....Figure 2.2 Geometrical parameters of an elliptical lens.Figure 2.3 (a) Equivalent aperture on top of the elliptical lens antenna. (b...Figure 2.4 (a) Scheme of the critical angle calculation on an elliptical len...Figure 2.5 (a) Incident, reflected, and transmitted power density in a diele...